Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine

Published:1986-12-20 Issue:Part 2, No. 12 Volume:25 Page:L979-L982
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Horiguchi Seishi,Kimura K\=oz\=o,Kamon Koichi,Mashita Masao,Shimazu Mitsuru,Mihara Minoru,Ishii Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Beam Epitaxy;Encyclopedia of Materials: Science and Technology;2001

2. Ligand lability of triethylgallium on GaAs(100);Surface Science;2000-03

3. Gas-Source Molecular Beam Epitaxy: GaxIn1−xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties;Molecular Beam Epitaxy;1995

4. Growth and Characterization of GaAs Films from Tris(di-tert-butylarsino)gallane;Chemistry of Materials;1994-06-01

5. Chemistry;Gas Source Molecular Beam Epitaxy;1993

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