Highly carbon‐dopedp‐type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105835
Reference20 articles.
1. GaAs growth in metal–organic MBE
2. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
3. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
4. Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
5. p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
Cited by 72 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrochemical Reduction Properties of Extended Space Charge InGaP and GaP Epitaxial Layers;Journal of The Electrochemical Society;2016
2. Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3;Journal of Crystal Growth;2004-12
3. Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs;IEEE Transactions on Electron Devices;2002
4. Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N2Ambient;Japanese Journal of Applied Physics;2000-11-15
5. Be diffusion in InGaAs/InP heterojunction bipolar transistors;IEEE Electron Device Letters;2000-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3