Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy
2. Influence of gallium sources on carbon incorporation efficiency into InGaAs grown by metalorganic chemical vapor deposition
3. Growth of carbon‐dopedp‐type InxGa1−xAs (0
4. Heavily carbon-doped p-type InGaAs by MOMBE
5. Carbon Incorporation in (AlGa)As, (AlIn)As and (GaIn)As Ternary Alloys Grown by Molecular Beam Epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of unintentional carbon incorporation on the electrical properties of AlGaAs grown by MOCVD;Optical Materials;2020-10
2. Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers;Journal of Crystal Growth;2013-05
3. Characterization of MOVPE-grown p-InGaAs/n-InP interfaces;Journal of Crystal Growth;2009-08
4. Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties;Solar Energy Materials and Solar Cells;2009-01
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