Heavily carbon-doped p-type InGaAs by MOMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
2. Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy
3. Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE
4. Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy
5. Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
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1. Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3;Journal of Crystal Growth;2004-12
2. Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine;Journal of Crystal Growth;1999-07
3. Photoluminescence and Raman characterization of heavily doped Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide;Journal of Crystal Growth;1999-05
4. Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide;Journal of Applied Physics;1998-10-15
5. Effect of interfacial carbon on adhesion and toughness of gold–sapphire interfaces;Acta Materialia;1998-08
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