Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368646
Reference24 articles.
1. Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
2. p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
3. Carbon doping of InGaAs in solid-source molecular beam epitaxy using carbon tetrabromide
4. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
5. Insituinvestigation of the microcrystalline germanium nucleation and growth processes
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1. Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
2. High-performance, metamorphic InxGa1-xAs tunnel diodes grown by molecular beam epitaxy;IEEE Electron Device Letters;2003-10
3. Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy;Journal of Crystal Growth;2002-08
4. Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
5. Effect of Substrate Orientation on Photoluminescence of GaNAs;Japanese Journal of Applied Physics;2000-12-15
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