Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine-Reference-Cited by-同舟云学术

Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine

Published:1999-07 Issue:1-2 Volume:204 Page:1-9
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dumont H,Auvray L,Dazord J,Monteil Y,Bouix J,Ougazzaden A

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Tran Minh Duc;Thévenot;J. Crystal Growth,1997

2. Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates

3. Carbon doping in GaAs using trimethylarsine by metalorganic chemical vapor deposition with high-speed rotating susceptor

4. Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs

5. Evolution of surface structure during carbon doping in the metal-organic vapor-phase epitaxial growth of GaAs

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