Evolution of surface structure during carbon doping in the metal-organic vapor-phase epitaxial growth of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. GaAs surface control during metalorganic vapor phase epitaxy by reflectance anisotropy spectroscopy
2. Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering
3. The growth and characterization of high quality MOVPE GaAs and GaAlAs
4. Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs
5. Mechanism of carbon incorporation in MOCVD GaAs
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