Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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2. Configurational selectivity in benzyldimethylarsine complexes of palladium(II) and platinum(II): synthesis, spectroscopy and structures;Inorganica Chimica Acta;2003-03
3. Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine;Applied Surface Science;1999-08
4. Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine;Journal of Crystal Growth;1999-07
5. Metalorganic chemical vapor deposition for optoelectronic devices;Proceedings of the IEEE;1997
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