Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE-Reference-Cited by-同舟云学术

Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE

Published:1991-05 Issue:1-4 Volume:111 Page:870-875
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kitabatake M.,Fons P.,Greene J.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Preferential lateral chemical etching in reactive ion etching of aluminum and aluminum alloys

2. Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K

3. Insitusubstrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment

4. Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy

5. Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy

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2. Charge Assisted Deposition of Polycrystalline Silicon Thin Films by Cesium Sputter Ion Beam Deposition;Japanese Journal of Applied Physics;2004-10-08

3. Spatial Energy Distributions of Sputtered Atoms and Reflected Particles during Kr+and Ar+Ion Beam Sputtering of Si and Ge;Japanese Journal of Applied Physics;1999-12-15

4. Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition;Journal of Applied Physics;1994-10

5. Ion beam deposition;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05