Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.10449/fulltext
Reference30 articles.
1. Arbitrary doping profiles produced by Sb‐doped Si MBE
2. Evaporative antimony doping of silicon during molecular beam epitaxial growth
3. Molecular beam epitaxy of silicon: Effects of heavy Sb doping
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