Insitusubstrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100121
Reference4 articles.
1. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
2. Si Surface Cleaning by Si2H6–H2Gas Etching and Its Effects on Solid-Phase Epitaxy
3. Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon
4. Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process
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