Preferential lateral chemical etching in reactive ion etching of aluminum and aluminum alloys
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.569954
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metallization;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
2. Methods/Principles of Deposition and Etching of Thin Films;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
3. Molecular dynamics and quasidynamics simulations of low‐energy particle bombardment effects during vapor‐phase crystal growth: Production and annihilation of defects due to 50 eV Si incident on (2×1)‐terminated Si(001);Journal of Applied Physics;1993-04
4. Vertical oxide etching without inducing change in critical dimensions;Optical Engineering;1992
5. Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE;Journal of Crystal Growth;1991-05
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