Passivation of a-Si:H-based structures in KCN and HCN solutions and its application on p-i-n solar cell-Reference-Cited by-同舟云学术

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Passivation of a-Si:H-based structures in KCN and HCN solutions and its application on p-i-n solar cell

Published:2013-06 Issue:2 Volume:1 Page:151-165
ISSN:2224-3682
Container-title:Journal of the Chinese Advanced Materials Society
language:en
Short-container-title:Journal of the Chinese Advanced Materials Society

Author:

Pinčík Emil,Kobayashi Hikaru,Takahashi Masao,Brunner Róbert,Jurečka Stanislav

Publisher

Informa UK Limited

Link

http://www.tandfonline.com/doi/pdf/10.1080/22243682.2013.808063

Reference24 articles.

1. Influence of Si oxidation methods on the distribution of suboxides at Si/SiO2 interfaces and their band alignment: a synchrotron photoemission study

2. Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment

3. Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation

4. Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles

5. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of HCN passivation on silicon oxide thin layer;Journal of the Chinese Advanced Materials Society;2016-12-09

2. Interaction of KCN solutions with Si-based thin films;Journal of the Chinese Advanced Materials Society;2015-03-02

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