Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma
2. Plasma immersion ion implantation for ULSI processing
3. Plasma immersion ion implantation—a fledgling technique for semiconductor processing
4. Semiconductor processing by plasma immersion ion implantation
5. Synthesis of Soi Materials Using Plasma Immersion Ion Implantation
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Passivation of a-Si:H-based structures in KCN and HCN solutions and its application on p-i-n solar cell;Journal of the Chinese Advanced Materials Society;2013-06
2. Formation of SiC using low energy CO2 ion implantation in silicon;Applied Surface Science;2008-12
3. Effects of the high temperature plasma immersion ion implantation (PIII) of nitrogen in AISI H13 steel;Journal of Materials Science;2008-09
4. On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation;Applied Surface Science;2007-06
5. On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution;Open Physics;2007-01-01
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