Formation of SiC using low energy CO2 ion implantation in silicon-Reference-Cited by-同舟云学术

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Formation of SiC using low energy CO2 ion implantation in silicon

Published:2008-12 Issue:5 Volume:255 Page:2180-2184
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sari A.H.,Ghorbani S.,Dorranian D.,Azadfar P.,Hojabri A.R.,Ghoranneviss M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

2. On the balance between ion beam induced nanoparticle formation and displacive precipitate resolution in the C–Si system

3. Formation of a surface SiC layer by carbon-ion implantation into silicon

4. Formation of buried layers of β‐SiC using ion beam synthesis and incoherent lamp annealing

5. Synthesis of silicon carbide films by combined implantation with sputtering techniques

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