Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si-Reference-Cited by-同舟云学术

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Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Published:2007-03 Issue:11 Volume:253 Page:4836-4842
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Intarasiri S.,Hallén A.,Lu J.,Jensen J.,Yu L.D.,Bertilsson K.,Wolborski M.,Singkarat S.,Possnert G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Mechanical properties of 3C silicon carbide

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. High‐temperature ion beam synthesis of cubic SiC

4. X-ray characterization of growth and structural modification of Si by MeV ion implantation

5. Mechanism of buried β-SiC formation by implanted carbon in silicon

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation;Journal of Nanoparticle Research;2013-12-10

2. Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates;Chinese Physics B;2013-08

3. Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources;Materials;2013-04-16

4. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-07

5. High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide;Surface and Coatings Technology;2011-11

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