Author:
Khamsuwan J.,Intarasiri S.,Kirkby K.,Chu P.K.,Singkarat S.,Yu L.D.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Electronic Archive: “New Semiconductor Materials: Characteristics and Properties”, 2001. http://www.ioffe.ru/SVA/NSM/Semicond/SiC/.
2. Silicon carbide in contention
3. Ion Beam Synthesis of Silicon Carbide
4. Silicon carbide: synthesis and processing
5. FORMATION OF SiC IN SILICON BY ION IMPLANTATION
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