Raman monitoring of ZnSe and ZnSxSe1−x nanocrystals formed in SiO2 by ion implantation-Reference-Cited by-同舟云学术

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Raman monitoring of ZnSe and ZnSxSe1−x nanocrystals formed in SiO2 by ion implantation

Published:2018-11 Issue: Volume:435 Page:56-60
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Makhavikou M.,Parkhomenko I.,Vlasukova L.,Komarov F.,Milchanin O.,Mudryi A.,Zhivulko V.,Wendler E.,Togambayeva A.,Korolik O.

Funder

Belarusian Republican Foundation for Fundamental Research

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference31 articles.

1. Exciton line broadening in ZnSxSe1−xepilayers grown on GaAs by molecular‐beam epitaxy

2. Raman Scattering in ZnSxSe1-xAlloys

3. Facile Synthesis of Photoluminescent ZnS and ZnSe Nanopowders

4. Raman Scattering from ZnSe Nanolayers

5. Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

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