Magnetic-ion-doped silicon nanostructures fabricated by ion implantation and electron beam annealing-Reference-Cited by-同舟云学术

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Magnetic-ion-doped silicon nanostructures fabricated by ion implantation and electron beam annealing

Published:2013-07 Issue: Volume:307 Page:131-136
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Fang Fang,Johnson Peter B.,Kennedy John,Markwitz Andreas

Funder

Asia New Zealand Foundation

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Synthesis and characterization of SnO2 nanoparticles embedded in silica by ion implantation

2. Effect of crystal orientation on self-assembled silicon nanostructures formed by electron beam annealing;Johnson;J. Appl. Phys.,2005

3. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing;Fang;J. Nanosci. Nanotechnol.,2009

4. Controlled fabrication of Si nanostructures by high vacuum electron beam annealing;Fang;Physica E,2009

5. Nucleation and growth of Fe nanoparticles in SiO2: a TEM, XPS, and Fe L-edge XANES investigation;Leveneur;J. Phys. Chem. C,2011

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