Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates-Reference-Cited by-同舟云学术

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates

Published:2013-08 Issue:8 Volume:22 Page:086802
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Liu Xing-Fang,Sun Guo-Sheng,Liu Bin,Yan Guo-Guo,Guan Min,Zhang Yang,Zhang Feng,Dong Lin,Zheng Liu,Liu Sheng-Bei,Tian Li-Xin,Wang Lei,Zhao Wan-Shun,Zeng Yi-Ping

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1674-1056/22/i=8/a=086802/pdf

Reference31 articles.

1. Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon

2. Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

3. Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

4. Considerably long carrier lifetimes in high-quality 3C-SiC(111)

5. Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

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