Influence of Si oxidation methods on the distribution of suboxides at Si/SiO2 interfaces and their band alignment: a synchrotron photoemission study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. Microscopic structure of theSiO2/Si interface
2. Si/SiO2interface: New structures and well-defined model systems
3. New Structural Model forSi/SiO2Interfaces Derived from Spherosiloxane Clusters: Implications for Si2pPhotoemission Spectroscopy
4. Crystalline Oxides on Silicon: The First Five Monolayers
5. The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface
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