Author:
Zimmermann G.,Spika Z.,Marschner T.,Spill B.,Stolz W.,Göbel E.O.,Gimmnich P.,Lorberth J.,Greiling A.,Salzmann A.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by
6 articles.
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1. Ultrapure Metal‐Organic Precursors for MOVPE;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007
3. Darstellung und Kristallstrukturbestimmung von 1,2-Di-t-butyl-1,2-diiodo- diarsan (t-C4H9AsI)2 und Synthese von 1,2,3,4-Tetrakis(t-butyl)tetraarsetan (t-C4H9As)4 über selektive Reduktion von t-Butylarsendiiodid t-C4H9AsI2 Synthesis and Crystal Structure of 1,2-Di-t-butyl-1,2-diiododiarsane (t-C4H9AsI)2 and Synthesis of 1,2,3,4-Tetrakis(t-butyl)tetraarsetane (t-C4H9As)4 via Selective Reduction of t-Butylarsenic Diiodide t-C4H9AsI2;Zeitschrift für Naturforschung B;1997-07-01
4. MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources;Journal of Crystal Growth;1997-01
5. Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors;Journal of Crystal Growth;1997-01