The use of organic As precursors in the low pressure MOCVD of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3 in and analyses of adducts formed during the growth process
2. Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct source
3. A new approach to MOCVD of indium phosphide and gallium-indium arsenide
4. OMCVD growth of GaAs and AlGaAs using a solid as source
5. MOCVD in inverted stagnation point flow
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