Growth, doping, and etching of GaAs and InGaAs using tris-dimethylaminoarsenic
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Published:1997-01
Issue:1
Volume:15
Page:159
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering