MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3 in and analyses of adducts formed during the growth process-Reference-Cited by-同舟云学术

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MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3 in and analyses of adducts formed during the growth process

Published:1984-07 Issue:4 Volume:13 Page:703-726
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Cheng C. H.,Jones K. A.,Motyl K. M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02653990.pdf

Reference45 articles.

1. R.D. Dupuis and P.d. Dapkus, IEEE J. Quantum Elect.15, 128 (1979).

2. R.D. Dupuis, L.A. Mondy, and P.D. Dapkus,GaAs and Related Compounds 1978, London: Institute of Physics, 1972, p. 1.

3. C.E. Coates, M.L.H. Green, and K. Wade,Organometallic Compounds, Vol. 1, 3rd Ed., Methuen, London (1967) p. 307.

4. D.J. Schlyer and M.A. Ring, J. Organomet. Chem.114, 9 (1976).

5. G.E. Coates, M.L.H. Green, and K. Wade,Organometallic Compounds, Vol. 1, 3rd Ed., Methuen, London (1967) p. 343.

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