Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Metalorganic vapor phase epitaxy using organic group V precursors
2. Non-hydride group V sources for OMVPE
3. MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio
4. Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP
5. Highly controlled lnGaAs(P)/lnP MQW interfaces grown by MOVPE using TBA and TBP precursors
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1. Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study;Physical Review Applied;2017-06-12
2. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates;Journal of Applied Physics;2009-01
3. Coherence in real space: the transition range from bulk to confined states studied by the Franz–Keldysh effect;Physica E: Low-dimensional Systems and Nanostructures;2000-02
4. Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient;Journal of Crystal Growth;1999-07
5. Confinement effects in bulk samples derived from the Franz-Keldysh effect;Physical Review B;1999-06-15
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