The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345823
Reference25 articles.
1. Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic
2. Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs
3. Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source
4. 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs
5. Growth of high‐quality GaAs using trimethylgallium and diethylarsine
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