13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2
2. Mechanistic studies of the decomposition of trimethylaluminum on heated surfaces
3. The pyrolysis temperature of triethylgallium in the presence of arsine of trimethylaluminum
4. Diagnostics of Gas Reaction Using Trimethylgallium-AsH3and Triethylgallium-AsH3in Low-Pressure Organometallic Vapor Phase Epitaxy
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