Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99103
Reference18 articles.
1. Improved mobility in OM-VPE-grown Ga1−xInxAs
2. OMVPE growth of GaInAs
3. Metalorganic chemical-vapour-deposition growth and characterization of GaAs
4. Organometallic vapor phase epitaxial growth of InP using new phosphorus sources
5. Growth of high‐quality GaAs using trimethylgallium and diethylarsine
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3. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07
4. Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine;Japanese Journal of Applied Physics;1995-12-15
5. Comparative study on carbon incorporation in MOCVD AlGaAs layers between arsine and tertiarybutylarsine;Journal of Crystal Growth;1995-10
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