LP-MOVPE growth of InAs quantum dots using tertiarybutylarsine (TBA) in pure N2 ambient-Reference-Cited by-同舟云学术

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LP-MOVPE growth of InAs quantum dots using tertiarybutylarsine (TBA) in pure N2 ambient

Published:2004-08 Issue:3-4 Volume:268 Page:444-448
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Huang G.S,Tang X.H,Zhang B.L,Zhang Y.C,Tjin S.C

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Proposal and Experimental Results of Disordered Crystalline Semiconductors

2. Heavily Si‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane

3. The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine

4. H. Hardtdegen, Proceedings of the Ninth International Workshop on the Physics of the Semiconductor Devices (IWPSD), Delhi, India, 1997, p. 244.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007

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