Optical properties of InP nanowires on Si substrates with varied synthesis parameters-Reference-Cited by-同舟云学术

Optical properties of InP nanowires on Si substrates with varied synthesis parameters

Published:2008 Issue:1 Volume:92 Page:013121
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chuang Linus C.,Moewe Michael,Crankshaw Shanna,Chang-Hasnain Connie

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference19 articles.

1. M. Razeghi ,The MOCVD Challenge, Volume 1: A Survey of GaInAsP-InP for Photonic and Electronic Applications(Hilger, Bristol and Philadelphia, 1989).

2. High performance self-organized InGaAs quantum dot lasers on silicon

3. Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate

4. Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded Ge[sub x]Si[sub 1−x] buffer layers

5. Gallium arsenide and other compound semiconductors on silicon

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