Monoethylarsine as a novel replacement for arsine in the vapor deposition of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4
2. Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic
3. Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic
4. Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs
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