MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources-Reference-Cited by-同舟云学术

MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources

Published:1997-01 Issue:1-4 Volume:170 Page:167-172
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kirpal G.,Gerhardt M.,Benndorf G.,Schwabe R.,Pietag F.,Pietzonka I.,Lippold G.,Wagner G.,Franzheld R.,Gottschalch V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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3. Thesis;Zimmermann,1994

4. Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor‐phase epitaxy InGaAs/InP

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1. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007

2. A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources;Progress in Crystal Growth and Characterization of Materials;2000-01

3. Cyclohexylphosphine: synthesis and application to metalorganic vapor-phase epitaxy of InP;Journal of Crystal Growth;1999-10

4. Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient;Journal of Crystal Growth;1999-07

5. Effects of organic As-precursors on the incorporation of In and Ga into (GaIn)As films grown by metal-organic vapor-phase epitaxy;Thin Solid Films;1999-03