Decomposition mechanisms of trimethylgallium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference44 articles.
1. Advanced Crystal Growth;Giling,1987
2. Complex flow phenomena in MOCVD reactors
3. Proc. 15th Intern. Symp. on GaAs and Related Compounds;Aspnes,1989
4. Arsenic growth on the gallium arsenide surface during oxidation
5. Migration-Enhanced Epitaxy of GaAs and AlGaAs
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