Complex flow phenomena in MOCVD reactors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence
2. A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor
3. Gas Flow Pattern and Mass Transfer Analysis in a Horizontal Flow Reactor for Chemical Vapor Deposition
4. Proc. 6th Intern. Conf. on CVD;Ban,1972
5. Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference Holography
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