Metal Organic Vapor Phase Epitaxy in a Transmission Electron Microscope

Abstract

AbstractIn situ transmission electron microscopy (TEM) observations of the metal–organic vapor phase epitaxy (MOVPE) growth promise to enhance the understanding of this complex process. However, a new experimental approach is required, capable of live imaging at the atomic scale and simultaneously reflecting this method's elevated pressures. To this end, a closed gas cell in situ TEM setup is used as a micrometer‐scaled MOVPE reactor to grow GaP using tertiary butyl phosphine (TBP) and trimethyl gallium (TMGa). To prove the MOVPE reactor ability of the in situ TEM holder, the thermal decomposition of TBP and TMGa is shown to proceed similarly to conventional reactor setups. Decomposition temperatures align with susceptor temperatures in MOVPE machines. Formed products and their temperature decomposition curves are comparable to previous investigations performed in conventional reactors, even though the setups significantly differ. The obtained results are exploited to grow GaP nanostructures via the MOVPE growth process inside the TEM. To prepare a substrate surface for GaP growth, which is highly challenging, Au‐catalyzed vapor‐liquid‐solid‐grown GaP nanowires are grown in the reactor cell. Subsequently, the nanowire's sidewalls serve as MOVPE substrates. These results lay the foundation for crystal growth observation under MOVPE conditions in a TEM.