MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Funder
Air Force Office of Scientific Research
Division of Electrical, Communications and Cyber Systems
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00060
Reference62 articles.
1. Structural and electronic properties of Ga2O3-Al2O3 alloys
2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
3. Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
4. Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties
5. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
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