Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

Abstract

Abstract High-quality unintentionally doped (UID) (001) β-Ga2O3 homoepitaxial films were grown on native substrates through metalorganic CVD. The surface parallel grooves were repaired under low temperature and pressure conditions, reaching the surface roughness of 2.22 nm and the high electron mobility of 74.6 cm2/Vs. Enhancement-mode MOSFETs were fabricated on the UID β-Ga2O3 film, showing a positive turn-on threshold gate voltage of 4.2 V and a breakdown voltage of 673 V. These results can serve as a reference for (001)-oriented lateral Ga2O3 power transistors and may contribute to the development of Ga2O3 power devices.