State-of-the-Art β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors for Power Electronics-Reference-Cited by-同舟云学术

State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

Published:2022-10-07 Issue:41 Volume:7 Page:36070-36091
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Liu An-Chen¹,Hsieh Chi-Hsiang¹,Langpoklakpam Catherine¹,Singh Konthoujam James¹,Lee Wen-Chung¹,Hsiao Yi-Kai²,Horng Ray-Hua³^ORCID,Kuo Hao-Chung¹²,Tu Chang-Ching²^ORCID

Affiliation:

1. Department of Photonics, Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

2. Hon Hai Research Institute, Semiconductor Research Center, Taipei 11492, Taiwan

3. Institute of Electronics, Ming Chiao Tung University, Hsinchu 30010, Taiwan

Funder

Hon Hai Research Institute, Foxconn Technology Group

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c03345

Reference138 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. Crystal Structure of β‐Ga2O3

3. Some electrical properties of the semiconductor βGa2O3

4. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

5. Czochralski grown Ga2O3 crystals

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