Selective area growth of InGaAsP by OMVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Insitudefinition of semiconductor structures by selective area growth and etching
2. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures
3. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE
4. Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAs
5. MOCVD of InP and mass transport on structured InP substrates
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1. Photonic Integrated Circuits on InP;Springer Series in Optical Sciences;2017
2. Optical and structural properties of sulfur-doped ELOG InP on Si;Journal of Applied Physics;2015-06-07
3. Selective Epitaxy Growth of Multiple-Stacked InP/InGaAs on the Planar Type by Chemical Beam Epitaxy;Journal of the Korean Vacuum Society;2009-11-30
4. Demonstration of planar thick InP layers by selective MOVPE;Journal of Crystal Growth;2008-11
5. Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis;Journal of Applied Physics;2008-06
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