Insitudefinition of semiconductor structures by selective area growth and etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106413
Reference17 articles.
1. Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE
2. MOVPE growth of SiO2-masked InP structures at reduced pressures
3. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures
4. Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
5. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE
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4. Large bandgap energy control of multiple quantum wells selectively grown by low-pressure MOVPE;Journal of Crystal Growth;1997-01
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