Silicon shadow mask MOVPE for in-plane thickness control of structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Insitudefinition of semiconductor structures by selective area growth and etching
2. 1.24–1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy
3. Integrated optical modeshape adapters in InGaAsP/InP for efficient fiber-to-waveguide coupling
4. Non-planar MOVPE growth using a novel shadow-masking technique
5. A laterally selective growth technique for the integration of opto-electronic devices
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1. Using Polarization in the Integration of Optoelectronic devices;Integrated Photonics Research and Applications/Nanophotonics;2006
2. Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy;Journal of Crystal Growth;2005-03
3. Bridge Mask Growth Using Organomtallic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2005-01-14
4. Unconventional Methods for Fabricating and Patterning Nanostructures;Chemical Reviews;1999-05-19
5. Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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