1.24–1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
2. New photonic device integration by selective-area MOVPE and its application to optical modulator/laser integration (invited paper)
3. Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates
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1. Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows;Japanese Journal of Applied Physics;2022-03-01
2. Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth;Electronics Letters;2009
3. InxGa1−xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics;Journal of Crystal Growth;2008-11
4. GaN Selective Area Metal–Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model;Japanese Journal of Applied Physics;2007-11-02
5. Material quality improvements of ultra-broadband gain materials grown by selective-area-growth techniques;Journal of Crystal Growth;2005-12
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