Material quality improvements of ultra-broadband gain materials grown by selective-area-growth techniques
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Current status of selective area epitaxy by OMCVD
2. Non-planar and masked-area epitaxy by organometallic chemical vapour deposition
3. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures
4. Control of selective area growth of InP
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission;IEEE Journal of Selected Topics in Quantum Electronics;2009-07
2. Selective-area MOVPE growth for 10Gbit/s electroabsorption modulator integrated with a tunable DBR laser;Journal of Crystal Growth;2007-01
3. (Invited) Growth and Processing Techniques for Fabricating Ultra Broadband High-Power Low-Cross-Talk Semiconductor Optical Amplifiers;2006 IEEE LEOS Annual Meeting Conference Proceedings;2006-10
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