Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows

Author:

Yoshida Shin,Shojiki KanakoORCID,Miyake Hideto,Uemukai Masahiro,Tanikawa Tomoyuki,Katayama Ryuji

Abstract

Abstract We investigated influences of mask pattern on the emission from InGaN multiple quantum wells through the differences in plane orientation appearing on the multifaceted islands in selective area metalorganic vapor phase epitaxy. Cathodoluminescence mapping confirmed that emission colors changed depending on the crystal plane. Photoluminescence spectroscopy showed that the emission wavelength red-shifted by increasing the mask width. By combining the difference of indium incorporation efficiency depending on the crystal plane and the lateral vapor phase diffusion effect, multiple quantum wells with different emission wavelengths of up to 106 nm were grown simultaneously in the microscale region.

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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