Demonstration of planar thick InP layers by selective MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Control of abnormal edge growth in selective area MOVPE of InP
2. Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy
3. Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
4. Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis
5. Selective area growth of InGaAsP by OMVPE
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1. Foundry Photonic Process Extension With Bandgap Tuning Using Selective Area Growth;IEEE Journal of Selected Topics in Quantum Electronics;2019-09
2. Effects of growth temperature on surface morphology of InP grown on patterned Si(0 0 1) substrates;Journal of Crystal Growth;2015-04
3. Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation;Journal of The Electrochemical Society;2012
4. (Invited) Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation;ECS Transactions;2011-10-04
5. Growth of high quality InP layers in STI trenches on miscut Si (001) substrates;Journal of Crystal Growth;2011-01
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