Effects of growth temperature on surface morphology of InP grown on patterned Si(0 0 1) substrates-Reference-Cited by-同舟云学术

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Effects of growth temperature on surface morphology of InP grown on patterned Si(0 0 1) substrates

Published:2015-04 Issue: Volume:416 Page:113-117
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Sang-Moon,Cho Young Jin,Park Jong-Bong,Shin Keun Wook,Hwang Euichul,Lee Sunghun,Lee Myoung-Jae,Cho Seong-Ho,Su Shin Dong,Park Jinsub,Yoon Euijoon

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. High-Speed and High-Output InP–InGaAs Unitraveling-Carrier Photodiodes

2. III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

3. Heteroepitaxy and selective area heteroepitaxy for silicon photonics

4. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

5. Growth of InP Layers on Nanometer-Scale Patterned Si Substrates

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1. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region;Nanomaterials;2023-02-02

2. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review;Crystals;2022-07-21

3. Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001);Crystals;2022-03-26

4. Mechanism of defect evolution in H+ and He+ implanted InP*;Chinese Physics B;2021-08-01

5. Si-based InGaAs photodetectors on heterogeneous integrated substrate;Science China Physics, Mechanics & Astronomy;2021-04-29

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