Growth of high quality InP layers in STI trenches on miscut Si (001) substrates-Reference-Cited by-同舟云学术

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Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

Published:2011-01 Issue:1 Volume:315 Page:32-36
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang G.,Leys M.R.,Nguyen N.D.,Loo R.,Brammertz G.,Richard O.,Bender H.,Dekoster J.,Meuris M.,Heyns M.M.,Caymax M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Terahertz quantum cascade lasers based on

2. Monolithic integration of InP-based transistors on Si substrates using MBE

3. J. Decobert, N. Dupuis, P.Y. Lagree, N. Lagay, Versailles, 2008, pp. 1–4.

4. MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

5. Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

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