Optical and structural properties of sulfur-doped ELOG InP on Si-Reference-Cited by-同舟云学术

Optical and structural properties of sulfur-doped ELOG InP on Si

Published:2015-06-07 Issue:21 Volume:117 Page:215303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sun Yan-Ting,Junesand Carl,Metaferia Wondwosen^ORCID,Kataria Himanshu,Julian Nick^ORCID,Bowers John,Pozina Galia,Hultman Lars^ORCID,Lourdudoss Sebastian

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921868

Reference35 articles.

1. Growth of InP on Si substrates by molecular beam epitaxy

2. Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy

3. M. Yamaguchi , in Proceedings of the IEEE 40th Photovoltaic Specialist Conference (PVSC), Denver, CO, USA, 8–13 June 2014, pp. 0821–0826.

4. (Invited) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications

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