Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy

Published:1995-06-01 Issue:Part 2, No. 6A Volume:34 Page:L657-L659
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tachikawa Masami,Yamada Takeshi,Sasaki Tohru,Mori Hidefumi,Kadota Yoshiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of InGaAs p-i-n photo-detectors prepared on misoriented Si substrates;International Conference on Optoelectronic Information and Functional Materials (OIFM 2023);2023-08-07

2. Reliability of lasers on silicon substrates for silicon photonics;Reliability of Semiconductor Lasers and Optoelectronic Devices;2021

3. Antiphase Boundary Free InP Microridges on (001) Silicon by Selective Area Heteroepitaxy;Crystal Growth & Design;2020-11-17

4. Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy;physica status solidi (a);2020-11-02

5. Lasing Characteristics and Reliability of 1550 nm Laser Diodes Monolithically Grown on Silicon;physica status solidi (a);2020-10-06

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